Image pickup element and image pickup device

ABSTRACT

An imaging element includes: an imaging unit in which a plurality of pixel groups including a plurality of pixels that output pixel signals according to incident light are formed, and on which incident light corresponding to mutually different pieces of image information is incident; a control unit that controls, for each of the pixel groups, a period of accumulating in the plurality of pixels included in the pixel group; and a readout unit that is provided to each of the pixel groups, and reads out the pixel signals from the plurality of pixels included in the pixel group.

CROSS REFERENCE TO RELATED APPLICATION

This is a continuation of U.S. patent application Ser. No. 15/793,495filed Oct. 25, 2017, which in turn is a continuation of U.S. patentapplication Ser. No. 14/492,336, filed Sep. 22, 2014. The contents ofthese U.S. applications and the following Japanese and Internationalpatent applications are incorporated herein by reference:

2012-082158 filed in JP on Mar. 30, 2012,

2012-104830 filed in JP on May 1, 2012, and

PCT/JP2013/002119 filed on Mar. 28, 2013.

BACKGROUND 1. Technical Field

The present invention relates to an imaging element and an imagingdevice.

2. Related Art

An imaging unit in which a backside irradiating type imaging chip and asignal processing chip are connected, via microbumps, for each cell unitincluding a plurality of pixels is known.

PRIOR ART DOCUMENTS Patent Literatures

[Patent Literature 1] Japanese patent application Publication No.2006-49361

SUMMARY

In the above-described imaging unit, a period of accumulating electricalcharges and readout of pixel signals are controlled on a cell-by-cellbasis. However, because the above-described cell each includes a groupof two-dimensionally adjacent pixels, the period of accumulatingelectrical charges and the readout of pixel signals cannot be minutelycontrolled within a cell or for different cells.

According to a first aspect of the present invention, an imaging elementcomprises:

an imaging unit in which a plurality of pixel groups including aplurality of pixels that output pixel signals according to incidentlight are formed, and on which incident light corresponding to mutuallydifferent pieces of image information is incident;

a control unit that controls, for each of the pixel groups, a period ofaccumulating in the plurality of pixels included in the pixel group; and

a readout unit that is provided to each of the pixel groups, and readsout the pixel signals from the plurality of pixels included in the pixelgroup.

According to a second aspect of the present invention, an imaging devicethat uses the above-described imaging element is provided.

The summary clause does not necessarily describe all necessary featuresof the embodiments of the present invention. The present invention mayalso be a sub-combination of the features described above.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a sectional view of a backside irradiating type MOS imagingelement according to the present embodiment.

FIG. 2 is a diagram for explaining a pixel array and a unit group of animaging chip.

FIG. 3 is an equivalent circuit schematic of a pixel.

FIG. 4 is a schematic showing a relationship among connections betweenpixels in a unit group.

FIG. 5 is a block diagram showing a configuration of an imaging deviceaccording to the present embodiment.

FIG. 6 is a block diagram showing a functional configuration of animaging element.

FIG. 7 shows a timing diagram of operations of each pixel group.

FIG. 8 shows an example of another unit group and a relationship ofconnections between pixels.

FIG. 9 is a sectional view of another backside irradiating type imagingelement.

FIG. 10 shows an example of a unit group corresponding to the imagingelement in FIG. 9 and a relationship of connections between pixels.

FIG. 11 shows another equivalent circuit of a pixel.

FIG. 12 schematically shows another unit group of an imaging element.

FIG. 13 shows a schematic of a pixel unit in a unit group.

FIG. 14 schematically shows still another unit group of an imagingelement.

FIG. 15 shows a schematic of a pixel unit in a unit group.

FIG. 16 schematically shows another unit group of an imaging element.

FIG. 17 shows a schematic of a pixel unit in a unit group.

DESCRIPTION OF EXEMPLARY EMBODIMENTS

Hereinafter, (some) embodiment(s) of the present invention will bedescribed. The embodiment(s) do(es) not limit the invention according tothe claims, and all the combinations of the features described in theembodiment(s) are not necessarily essential to means provided by aspectsof the invention.

FIG. 1 is a sectional view of a backside irradiating type imagingelement 100 according to the present embodiment. The imaging element 100includes an imaging chip 113 that outputs a pixel signal correspondingto incident light, a signal processing chip 111 that processes the pixelsignal, and a memory chip 112 that stores the pixel signal. Theseimaging chip 113, signal processing chip 111, and memory chip 112 arelayered, and are electrically connected with each other via conductivebumps 109, such as Cu.

Note that, as illustrated, incident light is incident mainly in the Zaxis positive direction that is indicated with an outlined arrow. In thepresent embodiment, the surface of the imaging chip 113 on a side onwhich the incident light is incident is called a backside. Also, asindicated with coordinate axes, the leftward direction on the figurethat is orthogonal to the Z axis is referred to as the X axis positivedirection, and the front side direction in the figure that is orthogonalto the Z and X axes is referred to as the Y axis positive direction. Inseveral figures mentioned below, the coordinate axes are displayed suchthat the orientation of each figure can be known on the basis of thecoordinate axes in FIG. 1.

One example of the imaging chip 113 is a backside irradiating type MOSimage sensor. A PD layer is disposed on a backside of an interconnectionlayer 108. A PD layer 106 has a plurality of PDs (photo diodes) 104 thatare two-dimensionally disposed, and transistors 105 providedcorresponding to the PDs 104.

Color filters 102 are provided on the incident light incidence side ofthe PD layer 106 via a passivation film 103. There are a plurality oftypes of the color filters 102 that allow passage of mutually differentwavelength ranges, and the color filters 102 are arrayed particularlycorresponding to the respective PDs 104. The arrays of the color filters102 are described below. A set of the color filter 102, the PD 104, andthe transistor 105 forms one pixel.

A microlens 101 is provided, corresponding to each pixel, on theincident light incidence side of the color filter 102. The microlens 101condenses incident light toward the corresponding PD 104.

The interconnection layer 108 has interconnections 107 that transmit apixel signal from the PD layer 106 to the signal processing chip 111.The interconnection 107 may be a multilayer, and may be provided with apassive element and an active element.

A plurality of the bumps 109 is disposed on a surface of theinterconnection layer 108. The plurality of bumps 109 are aligned with aplurality of the bumps 109 that are provided on the opposing surface ofthe signal processing chip 111, and, for example, the imaging chip 113and the signal processing chip 111 are pressed against each other;thereby, the aligned bumps 109 are bonded and electrically connectedwith each other.

Similarly, a plurality of the bumps 109 are disposed on the mutuallyopposing surfaces of the signal processing chip 111 and the memory chip112. These bumps 109 are aligned with each other, and, for example, thesignal processing chip 111 and the memory chip 112 are pressed againsteach other; thereby, the aligned bumps 109 are bonded and electricallyconnected with each other.

Note that bonding between the bumps 109 is not limited to Cu bumpbonding by solid phase diffusion, but microbump joining by soldermelting may be adopted. Also, approximately one bump 109 may beprovided, for example, for each output interconnection described below.Accordingly, the size of the bumps 109 may be larger than the pitch ofthe PDs 104. Also, in a peripheral area other than a pixel area wherepixels are arrayed, a bump that is larger than the bumps 109corresponding to the pixel area may also be provided.

The signal processing chip 111 has a TSV (through-silicon via) 110 thatconnects circuits that are provided on a frontside and a backside,respectively. The TSV 110 is preferably provided in the peripheral area.Also, the TSV 110 may be provided also in the peripheral area of theimaging chip 113, and the memory chip 112.

FIG. 2 is a diagram for explaining a pixel array and a unit group 131 ofthe imaging chip 113. In particular, the figure shows a state of theimaging chip 113 as observed from the backside. A matrix of twentymillion pixels or more are arrayed on the pixel area. In the presentembodiment, adjacent four pixels×four pixels, 16 pixels, form one group.Grid lines in the figure show the concept that adjacent pixels aregrouped to form the unit group 131.

As illustrated in the partially enlarged view of the pixel area, theunit group 131 includes, within its upper left, upper right, lower left,and lower right portions, four so-called Bayer arrays each consisting offour pixels including green pixels Gb, Gr, a blue pixel B, and a redpixel R. The green pixels Gb, Gr have green filters as the color filters102, and receive light in the green wavelength band of incident light.Similarly, the blue pixel B has a blue filter as the color filter 102,and receives light in the blue wavelength band, and the red pixel R hasa red filter as the color filter 102, and receives light in the redwavelength band.

FIG. 3 illustrates an equivalent circuit schematic of a pixel 150. Eachof a plurality of the above-described pixels 150 has the above-describedPD 104, a transfer transistor 152, a reset transistor 154, an amplifyingtransistor 156, and a selecting transistor 158. At least a part of thesetransistors corresponds to the transistor 105 in FIG. 1. Furthermore, areset interconnection 300 to which an ON signal of the reset transistor154 is supplied; a transfer interconnection 302 to which an ON signal ofthe transfer transistor 152 is supplied; a power supply interconnection304 that receives power supply from a power supply Vdd; a selectinginterconnection 306 to which an ON signal of the selecting transistor158 is supplied; and an output interconnection 308 that outputs pixelsignals are disposed in the pixel 150. Although each transistor isexplained as an n-channel type FET as an example, the type of thetransistors is not limited thereto.

The source, gate, and drain of the transfer transistor 152 are connectedwith one end of the PD 104, the transfer interconnection 302, and thegate of the amplifying transistor 156, respectively. Also, the drain andsource of the reset transistor 154 are connected with the power supplyinterconnection 304, and the gate of the amplifying transistor 156,respectively. The drain and source of the amplifying transistor 156 areconnected with the power supply interconnection 304, and the drain ofthe selecting transistor 158, respectively. The gate and source of theselecting transistor 158 are connected with the selectinginterconnection 306 and the output interconnection 308, respectively. Aload current source 309 supplies current to the output interconnection308. That is, the output interconnection 308 for the selectingtransistor 158 is formed by a source follower. Note that the loadcurrent source 309 may be provided on the imaging chip 113 side or maybe provided on the signal processing chip 111 side.

FIG. 4 is a schematic that shows a relationship of connections among theabove-described pixels 150 in the unit group 131. Note that, althoughthe reference number of each transistor is omitted for the purpose ofmaking it easy to see the figure, each transistor of each pixel in FIG.4 has the same configuration and functions as those of each transistordisposed at a corresponding position within the pixel 150 in FIG. 3.

The pixels 150 having the color filters 102 of the same color form apixel group within the unit group 131 illustrated in FIG. 4.Corresponding to the fact that there are three types, RGB, of the colorfilters 102 as illustrated in FIG. 2, eight pixels, pixels Gb1, Gb2,Gb3, Gb4, Gr1, Gr2, Gr3, Gr4, form a G pixel group. Similarly, fourpixels, pixels R1, R2, R3, R4, form an R pixel group, and four pixels,pixels B1, B2, B3, B4, form a B pixel group. That is, a pixel group isformed for each wavelength range that is transmitted through the colorfilters 102.

Here, the gates of the transfer transistors of a plurality of pixelsincluded in each pixel group share a connection. Thereby, the gates ofthe transfer transistors of the pixels belonging to a pixel group arecontrolled all at once, and independently of other pixel groups.

In the example illustrated in FIG. 4, the gates of transfer transistorsof the pixels Gb1, Gb2, Gb3, Gb4, Gr1, Gr2, Gr3, Gr4 included in the Gpixel group are connected with a common G transfer interconnection 310.Similarly, the gates of transfer transistors of the pixels R1, R2, R3,R4 in the R pixel group are connected with a common R transferinterconnection 312, and the gates of transfer transistors of the pixelsB1, B2, B3, B4 in the B pixel group are connected with a common Btransfer interconnection 314.

Also, the sources of the selecting transistors of a plurality of pixelsincluded in each pixel group share a connection. The sources ofselecting transistors of the pixels Gb1, Gb2, Gb3, Gb4, Gr1, Gr2, Gr3,Gr4 in the G pixel group are connected with a common G outputinterconnection 320. Similarly, the sources of selecting transistors ofthe pixels R1, R2, R3, R4 in the R pixel group are connected with acommon R output interconnection 322, and the sources of selectingtransistors of the pixels B1, B2, B3, B4 in the B pixel group areconnected with a common B output interconnection 324.

A load current source 311 is connected with the G output interconnection320. Similarly, a load current source 313 is connected with the R outputinterconnection 322, and a load current source 315 is connected with theB output interconnection 324. Note that a reset interconnection 326 anda power supply interconnection 316 are shared within the unit group 131.Also, there are 16 selecting interconnections 318 each of which aredisposed for each pixel and connected with the gate of a correspondingselecting transistor.

In this manner, a plurality of output interconnections are provided tothe single unit group 131. However, because the imaging chip 113 is abackside irradiating type, the number of layers of the interconnections107 of the imaging chip 113 can be increased without reducing the amountof light incident on the PDs 104, and the interconnections can be routedwithout increasing the size in the plane direction.

FIG. 5 is a block diagram illustrating a configuration of an imagingdevice according to the present embodiment. An imaging device 500includes an imaging lens 520 as an imaging optical system, and theimaging lens 520 guides a subject luminous flux that is incident alongan optical axis OA to the imaging element 100. The imaging lens 520 maybe a replaceable lens that can be attached/detached to and from theimaging device 500. The imaging device 500 includes, mainly, the imagingelement 100, a system control unit 501, a drive unit 502, a photometryunit 503, a work memory 504, a recording unit 505, and a display unit506.

The imaging lens 520 is configured with a plurality of optical lensgroups, and forms an image of a subject luminous flux from a scene nearits focal plane. Note that, in FIG. 5, the imaging lens 520 isrepresentatively shown with a single virtual lens that is placed nearthe pupil. The drive unit 502 is a control circuit that executeselectrical charge accumulation control such as timing control and areacontrol of the imaging element 100 according to instructions from thesystem control unit 501. In this sense, it can be said that the driveunit 502 serves functions of an imaging element control unit that causesthe imaging element 100 to execute electrical charge accumulation andoutput pixel signals. The drive unit 502 forms an imaging unit, incombination with the imaging element 100. The control circuit that formsthe drive unit 502 may be formed as a chip, and layered on the imagingelement 100.

The imaging element 100 passes pixel signals to an image processing unit511 of the system control unit 501. The image processing unit 511performs various types of image processing by using the work memory 504as a workspace, and generates image data. For example, when image datain a JPEG file format is generated, white balance processes, gammaprocesses, and the like are executed, and then compression processes areexecuted. The generated image data is recorded in the recording unit 505and converted into display signals, and is displayed on the display unit506 for a preset period of time.

The photometry unit 503 detects luminance distribution of a scene priorto an imaging sequence for generating image data. The photometry unit503 includes an AE sensor of approximately one million pixels, forexample. A computing unit 512 of the system control unit 501 calculatesluminance of respective areas within a scene, upon receiving an outputof the photometry unit 503. The computing unit 512 decides a shutterspeed, a diaphragm value, and an ISO speed according to the calculatedluminance distribution. Note that pixels used in the above-described AEsensor may be provided within the imaging element 100, and in this case,the photometry unit 503 that is separate from the imaging element 100may not be provided.

FIG. 6 is a block diagram illustrating a functional configuration of theimaging element 100. An analog multiplexer 411 selects eight pixels Gb1and the like in the G pixel group of the unit group 131 in turn, andcauses their respective pixel signals to be output to the G outputinterconnection 320 and the like.

The pixel signals output via the multiplexer 411 are subjected to, viathe G output interconnection 320, correlated double sampling (CDS) andanalog/digital (A/D) conversion by a signal processing circuit 412 thatperforms CDS and A/D conversion. The A/D converted pixel signals arepassed over to a de-multiplexer 413 via a G output interconnection 321,and are stored in pixel memories 414 corresponding to the respectivepixels.

Similarly, a multiplexer 421 selects four pixels R1 and the like in theR pixel group of the unit group 131 in turn, and causes their respectivepixel signals to be output to the R output interconnection 322. A signalprocessing circuit 422 performs CDS and A/D conversion on the pixelsignals output by the R output interconnection 322. The A/D convertedpixel signals are passed over to a de-multiplexer 423 via an R outputinterconnection 323, and are stored in the pixel memories 414corresponding to the respective pixels.

Similarly, a multiplexer 431 selects four pixels B1 and the like in theB pixel group of the unit group 131 in turn, and causes their respectivepixel signals to be output to the B output interconnection 324. A signalprocessing circuit 432 performs CDS and A/D conversion on the pixelsignals output by the B output interconnection 324. The A/D convertedpixel signals are passed over to a de-multiplexer 433 via a B outputinterconnection 325, and are stored in the pixel memories 414corresponding to the respective pixels.

The multiplexers 411, 421, 431 are respectively formed on the imagingchip 113 by the selecting transistor 158 and the selectinginterconnection 306 in FIG. 3. The signal processing circuits 412, 422,432 are formed in the signal processing chip 111. Note that, in theexample of FIG. 6, the three signal processing circuits 412, 422, 432are provided corresponding to the G pixel group, the R pixel group, andthe B pixel group. The de-multiplexer 413, 423, 433 and the pixelmemories 414 are formed in the memory chip 112.

The G output interconnections 320, 321, the R output interconnections322, 323, and the B output interconnections 324, 325 are providedcorresponding to the G pixel group, the R pixel group, and the B pixelgroup in the unit group 131. Because the imaging element 100 is formedby layering the imaging chip 113, the signal processing chip 111, andthe memory chip 112, the interconnections can be routed withoutincreasing the size of each chip in the plane direction by usinginter-chip electrical connections that use the bumps 109 for theinterconnections.

An arithmetic circuit 415 processes the pixel signals stored in thepixel memories 414 and passes them over to an image processing unit in asubsequent step. The arithmetic circuit 415 may be provided in thesignal processing chip 111, or may be provided in the memory chip 112.Note that although connections of one group are illustrated in thefigure, such connections exist for each group in fact, and operate inparallel. Note that however the arithmetic circuit 415 may not exist foreach group, but for example a single arithmetic circuit 415 may performprocessing in sequence by referring to values in the pixel memories 414corresponding to respective groups.

FIG. 7 illustrates a timing diagram of operations of each pixel group inFIG. 4. At a clock time t0, the drive unit 502 turns on resettransistors of the respective pixels Gb1 and the like in the unit group131 via the reset interconnection 326. Thereby, electrical charges inthe gates of amplifying transistors of the respective pixels Gb1 and thelike are discarded, and the potential of the gates is reset.Furthermore, the drive unit 502 keeps the reset transistors of therespective pixels Gb1 and the like turned on, and from a clock time t1to a clock time t2, turns on transfer transistors of the respectivepixels Gb1 and the like belonging to the G pixel group via the Gtransfer interconnection 310. Thereby, electrical charges having beenaccumulated in PDs of the respective pixels Gb1 and the like belongingto the G pixel group are discarded.

Similarly, from the clock time t1 to the clock time t2, the drive unit502 turns on transfer transistors of the respective pixels R1 and thelike in the R pixel group and transistors of the respective pixels B1and the like in the B pixel group via the R transfer interconnection 312and the B transfer interconnection 314. Thereby, electrical chargeshaving been accumulated in PDs of the respective pixels R1 and the likein the R pixel group and the respective pixels B1 and the like in the Bpixel group are discarded. Thereafter, at a clock time t3, the driveunit 502 turns off the reset transistors of the respective pixels Gb1and the like in the unit group 131 via the reset interconnection 326.

At a clock time t4 which is a predetermined accumulation period afterthe above-described clock time t2, the drive unit 502 turns on thetransfer transistors of the respective pixels Gb1 and the like belongingto the G pixel group via the G transfer interconnection 310, andthereafter turns off the transfer transistors at a clock time t6.Thereby, electrical charges having been accumulated in the PDs betweenthe clock times t2 and t4 in the respective pixels Gb1 and the likebelonging to the G pixel group are transferred to the gates of theamplifying transistors via the transfer transistors all at once.Thereby, the drive unit 502 can control a period of accumulatingelectrical charges in the respective pixels Gb1 and the like belongingto the G pixel group collectively. Note that the accumulation period is,for example, the same with an exposure period.

In the example illustrated in FIG. 7, between the clock times t4 and t6,similarly to the G pixel group, the drive unit 502 turns on the transfertransistors of the respective pixels R1 and the like in the R pixelgroup via the R transfer interconnection 312. Thereby, electricalcharges having been accumulated between the clock times t2 and t4 in therespective pixels R1 and the like in the R pixel group are transferredto the gates of the amplifying transistors via the transfer transistorsall at once.

Also, in the example illustrated in FIG. 7, from a clock time t5 laterthan the clock time t4 to a clock time t7 which is a predeterminedperiod of time after, the drive unit 502 turns on the transfertransistors of the respective pixels B1 and the like in the B pixelgroup via the B transfer interconnection 314. Thereby, electricalcharges having been accumulated in the PDs between the clock times t2and t5 in the respective pixels B1 and the like in the B pixel group aretransferred to the gates of the amplifying transistors via the transfertransistors all at once.

Thereby, the drive unit 502 can control a period of accumulatingelectrical charges in the respective pixels B1 and the like in the Bpixel group collectively so that the period is different from that forthe respective pixels Gr1 and the like in the G pixel group. Also,electrical charges can be accumulated in a particular pixel group for anaccumulation period that is different from an exposure period. How longan accumulation period is set for which pixel group may be determinedbased on an output for each piece of image information corresponding toa pixel group at the time when tentative imaging is performed beforemain imaging. For example, when the system control unit 501 determinesthat an image based on one piece of image information is darker than animage based on another piece of image information, the system controlunit 501 may cause an accumulation period for a pixel groupcorresponding to the one piece of image information to be longer thanthat for other pixel groups by using the drive unit 502.

At a clock time t8 later than the above-described clock time t7, thedrive unit 502 turns on the selecting transistor of the pixel Gr1 in theG pixel group via the selecting interconnection 318. Thereby, pixelsignals according to the electrical charges transferred by the transfertransistors are generated by the amplifying transistors, and the pixelsignals are output to the G output interconnection 320 via the selectingtransistors. At a clock time t9 later than the clock time t8, the driveunit 502 turns on the selecting transistor of the pixel Gr2 in the Gpixel group via the selecting interconnection 318 to similarly output apixel signal of the pixel Gr2 to the G output interconnection 320 viathe selecting transistor. In this manner, the drive unit 502sequentially turns on the selecting transistors via the selectinginterconnections 318 and the like of the respective pixels Gr1 and thelike in the G pixel group to sequentially cause the pixel signals of therespective pixels Gr1 and the like in the G pixel group to be output tothe one G output interconnection 320.

In synchronization with the above-described clock times t8, t9, thedrive unit 502 sequentially turns on the selecting transistors of thepixels R1 and the like in the R pixel group via the selectinginterconnections 318 and the like to sequentially cause pixel signals ofthe respective pixels R1 and the like in the R pixel group to be outputto the one R output interconnection 322. Similarly, in synchronizationwith the above-described clock times t8, t9, the drive unit 502sequentially turns on the selecting transistors of the pixels B1 and thelike in the B pixel group via the selecting interconnections 318 and thelike to sequentially cause pixel signals of the respective pixels B1 andthe like in the B pixel group to be output to the one B outputinterconnection 324.

In the above-described manner, a pixel signal of each pixel included inthe unit group 131 is output from the output interconnection of eachpixel group. Note that preferably an order of pixels to output pixelsignals are predetermined within a pixel group, and incorporated ashardware or stored as software in the drive unit 502.

As described above, according to the present embodiment, a period ofaccumulating electrical charges in the respective pixels belonging toeach pixel group corresponding to each piece of image information can becontrolled collectively. Therefore, electrical charges can beaccumulated for an accumulation period that is suitable for each pieceof image information. For example, when a subject lopsided toward any ofRGB is imaged, the dynamic ranges of respective colors can be widened bydifferentiating accumulation periods of a pixel group corresponding to astrong color and a pixel group corresponding to a weak color. Also, apixel signal of each pixel can be read out independently of other pixelgroups.

FIG. 8 shows an example of another unit group 132 and a relationship ofconnections between pixels. Note that, in FIG. 8, although transferinterconnections and output interconnections are indicated, each pixelis indicated with a square by omitting other configurations, for thepurpose of making it easy to see the figure.

In the example illustrated in FIG. 8, white pixels W are disposed in apixel array of the imaging element 100, in place of the green pixel Gbin FIG. 2. The corresponding color filters 102 are not provided, orcolorless filters that allow passage of red, green, and blue areprovided in the white pixels W. Thereby, incident light corresponding tocolor information which is one example of mutually different imageinformation is incident on the green pixel Gb, the blue pixel B, the redpixel R, and the white pixel W.

The unit group 132 each has 4×4, 16, pixels. Note that the number ofpixels included in the respective unit groups 132 is not limitedthereto, as in the example of FIG. 4.

The pixels 150 having the color filters 102 of the same color form apixel group within the unit group 132. Corresponding to the fact thatthere are four types, RGBW, of the color filters 102, four pixels,pixels G1, G2, G3, G4, form a G pixel group. Similarly, four pixels,pixels R1, R2, R3, R4, form an R pixel group, and four pixels, pixelsB1, B2, B3, B4, form a B pixel group. Furthermore, four pixels, pixelsW1, W2, W3, W4, form a W pixel group. That is, a pixel group is formedfor each wavelength range that is transmitted through the color filters102.

Here, the gates of transfer transistors of a plurality of pixelsincluded in each pixel group share a connection. Thereby, the drive unit502 controls the gates of the transfer transistors in the pixel groupall at once, and independently of other pixel groups.

The gates of transfer transistors of the pixels G1, G2, G3, G4 includedin the G pixel group are connected with a common G transferinterconnection 330. Similarly, the gates of transfer transistors of thepixels R1, R2, R3, R4 in the R pixel group are connected with a common Rtransfer interconnection 332, and the gates of transfer transistors ofthe pixels B1, B2, B3, B4 in the B pixel group are connected with acommon B transfer interconnection 334. Furthermore, the gates oftransfer transistors of the pixels W1, W2, W3, W4 in the W pixel groupare connected with a common W transfer interconnection 336.

Also, the output sides of selecting transistors of a plurality of pixelsincluded in each pixel group share a connection. The output sides ofselecting transistors of the pixels G1, G2, G3, G4 in the G pixel groupare connected with a common G output interconnection 340. Similarly, theoutput sides of selecting transistors of the pixels R1, R2, R3, R4 inthe R pixel group are connected with a common R output interconnection342, and the sources of selecting transistors of the pixels B1, B2, B3,B4 in the B pixel group are connected with a common B outputinterconnection 344. Furthermore, the output sides of selectingtransistors of the pixels W1, W2, W3, W4 in the W pixel group areconnected with a common W output interconnection 346.

Note that, as in the example of FIG. 4, a reset interconnection and apower supply interconnection are shared within the unit group 132. Also,there are 16 selecting interconnections each of which are disposed foreach pixel and connected with the gate of a corresponding selectingtransistor. Furthermore, as in the example of FIG. 4, a load currentsource is connected with each output interconnection.

Thereby, the drive unit 502 can control a period of accumulatingelectrical charges in the respective pixels belonging to each pixelgroup collectively. Also, electrical charges can be accumulated in aparticular pixel group for an accumulation period that is different fromthat of other pixel groups. For example, because color filters in the Wpixel group are colorless, the light amount may be larger than those forthe G pixel group and the like. Accordingly, by making a period ofaccumulating electrical charges in the respective pixels of the W pixelgroup shorter than the period of accumulating electrical charges in therespective pixels in the G pixel group and the like, respectivelyappropriate exposure can be attained for the W pixel group and the Gpixel group and the like.

FIG. 9 is a sectional view of another backside irradiating type imagingelement 160. Configurations of the imaging element 160 that are the samewith those of the imaging element 100 in FIG. 1 are given the samereference numbers, and explanation thereof is omitted.

The imaging element 160 in FIG. 9 has an opening mask 162 between thepassivation film 103 and the color filters 102. The opening mask 162 isformed for example with an aluminum film.

The opening mask 162 has openings 164, 165, 166 corresponding to therespective PDs 104, and portions other than the openings block incidentlight. Thereby, the opening mask 162 allows passage of a part of aluminous flux in an imaging optics depending on opening positions. Theopening 164 that corresponds to a pixel disposed farthest in the X axisnegative direction among four pixels illustrated in the example shown inFIG. 9 is displaced toward the X axis negative direction in relation tothe PD 104. On the other hand, the opening 166 that corresponds to apixel third farthest in the X axis negative direction among the fourpixels is displaced toward the X axis positive direction in relation tothe PD 104. Thereby, it is possible to cause a luminous flux that isdisplaced in the X axis negative or positive direction of the exit pupilof the imaging optics to be incident, and acquire information of phasedifferences AF.

Pixels in which these openings are displaced in relation to the PDs 104are sometimes called parallax pixels. On the other hand, the opening 165is not displaced in relation to the PD 104. The white color filters 102are disposed in the parallax pixels. These pixels are sometimes callednon-parallax pixels. The color filters 102 of any of RGB are disposed inthe non-parallax pixels.

FIG. 10 shows an example of unit groups 167, 168 corresponding to theimaging element 160, and a relationship of connections between pixels.Note that, in FIG. 10, although transfer interconnections and outputinterconnections are indicated, each pixel is indicated with a square byomitting other configurations, for the purpose of making it easy to seethe figure, as in FIG. 8.

In the example illustrated in FIG. 10, parallax pixels Lt1, Rt1 aredisposed in a 4×4 pixel array of the imaging element 160, in place ofthe green pixels Gr1, Gr2 in FIG. 4. The parallax pixel Lt1 correspondsto the pixel in FIG. 9 in which the opening 164 is provided, and theparallax pixel Rt1 corresponds to the pixel in FIG. 9 in which theopening 166 is provided. Also, the 4×4, 16, pixels form a unit group167.

The pixels 150 having the color filters 102 of the same color form apixel group within the unit group 167. Corresponding to the fact thatthere are three types, RGB, of the color filters 102, the G pixel group,the R pixel group, and the B pixel group are formed, as in FIG. 4.Because configurations and actions of the G pixel group, the R pixelgroup, and the B pixel group are similar to those in FIG. 4, explanationthereof is omitted. Note that however that, corresponding to the factthat the parallax pixels Lt1, Rt1 are disposed in the unit group 167, inplace of the green pixels Gr1, Gr2 in FIG. 4, the G pixel group isformed with six pixels. Note that, although a G transfer interconnection370, an R transfer interconnection 372, a B transfer interconnection374, a G output interconnection 380, an R output interconnection 382,and a B output interconnection 384 that are separate from the unit group167 are provided to the unit group 168, their connection relationship issimilar to that for the unit group 167.

Furthermore, a pixel group is also formed for each opening position. Inthis case, a pixel group is formed astride a plurality of the unitgroups 167, 168. In the example shown in FIG. 10, four pixels, parallaxpixels Lt1, Lt2, Rt1, Rt2 whose opening positions are displaced, form aparallax pixel group.

The gates of transfer transistors of the parallax pixels Lt1, Lt2, Rt1,Rt2 included in the parallax pixel group are connected with a commonparallax transfer interconnection 356. Also, the output sides of theselecting transistors of the pixels Lt1, Lt2, Rt1, Rt2 in the parallaxpixel group are connected with a common parallax output interconnection366.

Thereby, the drive unit 502 can control a period of accumulatingelectrical charges in the respective pixels belonging to each pixelgroup collectively. Also, electrical charges can be accumulated in aparticular pixel group for an accumulation period that is different fromthat of other pixel groups. Furthermore, as in the example of FIG. 4, aload current source is connected with each output interconnection.

For example, when a release button of the imaging device 500 ishalf-pressed, the respective pixels Lt1 and the like in the parallaxpixel group are driven to acquire information of the phase differencesAF, and also at this time point, the respective pixels Gr1 and the likeof the other pixel groups are not driven. On the other hand, when therelease button of the imaging device 500 is fully pressed, therespective pixels Gr1 and the like in the G pixel group, the R pixelgroup, and the B pixel group are driven to acquire information of RGBimages, and also the respective pixels Lt1 and the like in the parallaxpixel group are not driven. Thereby, in a state where the release buttonis half-pressed, electrical charges can be accumulated for anaccumulation period suitable for information of the phase differencesAF, and also information of the phase differences AF can be obtained ina shorter period of time by performing image processing with lesspixels. On the other hand, in a state where the release button is fullypressed, electrical charges can be accumulated for an accumulationperiod that is suitable for information of RGB images while maintaininga high resolution.

Note that although, in FIG. 10, the parallax pixel group is formedastride two unit groups 167, 168, the parallax pixel group may be formedby parallax pixels within a unit group or astride three or more unitgroups. Furthermore, the parallax pixel group may be formed for eachdisplacement direction of opening positions. That is, a parallax pixelgroup of a plurality of the pixels Lt1, Lt2, and the like whose openingsare displaced in the X axis negative direction, and a parallax pixelgroup of a plurality of the pixels Rt1, Rt2, and the like whose openingsare displaced in the X axis positive direction may be formed.

Also, in the array of FIG. 4 or 8, each pixel may have a displacedopening. In this case, a pixel group may be formed for each color andeach displacement direction of opening positions. Furthermore, insteadof or in addition to the parallax pixels in FIG. 10, a pixel that has anon-displaced opening and to which the color filter 102 is not providedor which has the colorless color filter 102 may be disposed as an AEpixel within the unit groups 167, 168. In this case also, a plurality ofAE pixels form an AE pixel group so that the drive unit 502 controls aperiod of accumulating electrical charges in the respective pixelsbelonging to the AE pixel group collectively. Thereby, it is possible toset an accumulation period that is suitable for obtaining exposureinformation as image information, and read out pixel informationindependently of the other pixel groups for example at the time when therelease button is half-pressed.

FIG. 11 illustrates an equivalent circuit of another pixel 170.Configurations in FIG. 11 that are the same with those of the pixel 150in FIG. 3 are given the same reference numbers, and explanation thereofis omitted. Note that although, as in the example of FIG. 4, a loadcurrent source is connected with the output interconnection 308,illustration thereof is omitted.

In the pixel 170, a row selecting transistor 171 and a column selectingtransistor 172 are provided between the transfer interconnection 302 andthe gate of the transfer transistor 152. The gate of the row selectingtransistor 171 is connected with a row selecting interconnection 391,and the gate of the column selecting transistor 172 is connected with acolumn selecting interconnection 392. For example, the gates of rowselecting transistors of pixels that are lined up in the X direction(that is, the row direction) with the pixel 170 at least within the unitgroup 131 are disposed in common to the row selecting interconnection391. Similarly, the gates of column selecting transistors of pixels thatare lined up in the Y direction (that is, the column direction) with thepixel 170 at least within the unit group 131 are disposed in common tothe column selecting interconnection 392.

According to the above-described configuration, the transfer transistor152 of the pixel 170 that is specified by the row selectinginterconnection 391 and the column selecting interconnection 392 when anON signal is provided to the interconnections can be turned on. Thereby,ON/OFF of transfer transistors can be controlled on a pixel-by-pixelbasis.

Furthermore, in place of the single selecting transistor 158 of thepixel 150, a row selecting transistor 174 and a column selectingtransistor 175 are provided to the pixel 170. The gate of the rowselecting transistor 174 is connected with a row selectinginterconnection 394, and the gate of the column selecting transistor 175is connected with a column selecting interconnection 395. For example,the gates of row selecting transistors of pixels that are lined up inthe X direction (that is, the row direction) with the pixel 170 at leastwithin the unit group 131 are disposed in common to the row selectinginterconnection 394. Similarly, the gates of column selectingtransistors of pixels that are lined up in the Y direction (that is, thecolumn direction) with the pixel 170 at least within the unit group 131are disposed in common to the column selecting interconnection 395.

According to the above-described configuration, a pixel signal of thepixel 170 that is specified by the row selecting interconnection 394 andthe column selecting interconnection 395 when an ON signal is added tothe interconnections can be output to the output interconnection 308.Thereby, the number of interconnections can be reduced as compared withthe selecting interconnections 318 that correspond to the selectingtransistors 158 on a one-to-one basis as in the pixel 150.

Note that the row selecting interconnection 391 and the column selectinginterconnection 392 for the transfer transistor 152, and the rowselecting interconnection 394 and the column selecting interconnection395 for the output interconnection 308 may not be used in pairs. Theconfigurations of the pixel 150 may be used for either of them. Also,when transfer and output are never performed simultaneously, the rowselecting interconnections 391, 394 may be a single interconnection tobe used in common for transfer and output, and the column selectinginterconnections 392, 395 may be a single interconnection to be used incommon for transfer and output.

In any of the above-described embodiments, the reset interconnection 326and the power supply interconnection 316 are shared within the unitgroup 131. In addition to this, the reset interconnection 326 and thepower supply interconnection 316 may be shared among a plurality of theunit groups 131. Also, instead of this, the reset interconnection 326may be an interconnection which is shared within each pixel group, andseparate among pixel groups. Furthermore, the reset interconnection 326may be a separate interconnection for each pixel, and the resettransistor 154 may be controlled similar to control of the transfertransistor 152 in the pixel 170.

As described above, according to the present embodiments, an electricalcharge accumulation period and readout are controlled by handling aplurality of pixels that correspond to the same image information as apixel group, within the unit group 131 or among the unit groups 131.Accordingly, an electrical charge accumulation period and readout timingsuitable for each piece of image information can be set.

FIG. 12 schematically illustrates a unit group 602 of another imagingelement 600. FIG. 13 illustrates a schematic of a pixel unit 603 withinthe unit group 602.

In the unit group 602 of the imaging element 600, pixels are arrayed inBayer arrays two-dimensionally as in FIG. 2. A row selecting line isprovided to every two rows of pixels, and two rows of pixels areconnected in common to each row selecting line. An outputinterconnection 604 is provided to every two columns of pixels, and twocolumns of pixels are connected in common to each output interconnection604. Each of the output interconnections 604 is connected on aone-to-one basis with a CDS circuit 608 via a bump 606 that electricallyconnects the imaging chip 113 and the signal processing chip 111.

Outputs of a plurality of CDS circuits 608 that are each connected on aone-to-one basis with each of a plurality of the output interconnections604 included in the unit group 602 are input to a multiplexer 610.Furthermore, an output from the multiplexer 610 is input to an A/Dconverting circuit 612, and an output of the A/D converting circuit 612is connected with the pixel memories 414.

Also, one unit in a Bayer array forms the pixel unit 603. That is, thepixel unit 603 has four pixels Gb, Gr, B, R.

The power supply interconnection Vdd and a reset interconnection areconnected in common to all the pixels included in the unit group 131.Also, a Gb transfer interconnection is connected in common to pixels Gbin the unit group 131. Similarly, a Gr transfer interconnection isconnected in common to pixels Gr in the unit group 131, a B transferinterconnection is connected in common to pixels B in the unit group131, and an R transfer interconnection is connected in common to pixelsR in the unit group 131. Furthermore, the reset interconnection and eachtransfer interconnection are provided separately among a plurality ofthe unit groups 131.

The pixels Gb, Gr, B, R of the pixel unit 603 share a reset transistor620, an amplifying transistor 622, and a selecting transistor 624. Also,the pixel Gb1 has transfer transistors 626, 628. Similarly, the pixel Grhas transfer transistors 630, 632, the pixel B has transfer transistors634, 636, and the pixel R has transfer transistors 638, 640.

When paying attention to each pixel, a relationship of connections amongthe pixel, and the reset transistor 620, the amplifying transistor 622,and the selecting transistor 624 is the same with that in FIG. 3. On theother hand, the transfer transistors 626 and the like have a connectionrelationship different from that in FIG. 3. The gate, drain, and sourceof the transfer transistor 626 of the pixel Gb are connected with the Gbtransfer interconnection, a row selecting line 1, and the gate of thetransfer transistor 628, respectively. Also, the source and drain of thetransfer transistor 628 are connected with one end of the PD of thepixel Gb, and the gate of the amplifying transistor 622, respectively.The connection relationship of the pixels Gr, B, R is similar.

In the embodiments shown in FIGS. 12 and 13, an image signal of eachpixel is read out as described below. Note that explanation of a resetoperation is omitted to simplify the explanation.

One row selecting line, for example the row selecting line 1, is turnedon. In this state, one transfer interconnection, for example the Gbtransfer interconnection is turned on. Thereby, both the transfertransistors 626, 628 of the pixel Gb are turned on, and electricalcharges in the pixel Gb are transferred to the gate of the amplifyingtransistor 622. Here, because the row selecting line 1 is in an ONstate, the selecting transistor 624 has also been turned on, and a pixelsignal that has been amplified according to the electrical chargestransferred to the gate of the amplifying transistor 622 is output fromthe output interconnection 604.

Because the row selecting line 1 is shared by two rows of pixels withinthe unit group 602, and the Gb transfer interconnection is shared by thepixels Gb within the unit group 602, pixel signals of a single row ofthe pixels Gb in the unit group 602 are output simultaneously torespectively corresponding ones of the output interconnections 604.Here, because the CDS circuits 608 are each disposed on a one-to-onebasis with each of the output interconnections 604, pixel signals areretained, in a state where noises are removed therefrom, temporarily inthe respective CDS circuits 608.

The multiplexer 610 reads out pixel signals retained in the CDS circuits608 sequentially, and passes them over to the A/D converting circuit612. The A/D converting circuit 612 digitizes the pixel signalssequentially, and writes them into the pixel memories 414. Thereby, eachof the pixel signals of one row of the pixels Gb in the unit group 602is stored in the pixel memories 414 without being influenced by otherpixel signals.

Next, by turning on the Gr transfer interconnection in a state where therow selecting line 1 is turned on, each of the pixel signals of one rowof the pixels Gr in the unit group 602 is read out sequentially withoutbeing influenced by other pixel signals. Similarly, by turning on the Btransfer interconnection in a state where the row selecting line 1 isturned on, each of the pixel signals of one row of the pixels B in theunit group 602 is read out, and stored in the pixel memories 414, and byturning on the R transfer interconnection in a state where the rowselecting line 1 is turned on, each of the pixel signals of one row ofthe pixels R in the unit group 602 is read out, and stored in the pixelmemories 414. In the above-described manner, the pixel signals of tworows of the pixels in the unit group 602 are read out.

Next, by turning on a row selecting line 2 and repeating theabove-described procedure, pixel signals of next two row of pixels inthe unit group 602 are read out. By repeating the above-describedprocedure for all the row selecting lines, pixel signals of all thepixels in the unit group 602 are read out.

According to the embodiments in FIGS. 12 and 13, because only one rowselecting line has to be provided to two rows of pixels in each unitgroup 602, interconnections can be routed easily. Also, because only oneoutput interconnection has to be provided to two columns of pixels ineach unit group 602, interconnections can be routed easily.

FIG. 14 schematically illustrates a unit group 652 of still anotherimaging element 650. FIG. 15 illustrates a schematic of a pixel unit 653within the unit group 652. Configurations and functions in FIGS. 14 and15 that are the same with those in FIGS. 12 and 13 are given the samereference numbers, and explanation thereof is omitted.

In the unit group 652, one column selecting line is provided to twocolumns of pixels, and two columns of pixels are connected in common toeach column selecting line. The column selecting line is connected withthe drain of each of the transfer transistors 626, 630, 634, 638 of thepixel unit 653.

The respective output interconnections 604 are disposed in the signalprocessing chip 111 via the bumps 606, and are input to the onemultiplexer 610 provided corresponding to the unit group 652. Output ofthe multiplexer 610 is input to the A/D converting circuit 614. The A/Dconverting circuit 614 has a circuit that executes CDS digitally, inaddition to a circuit that digitizes pixel signals. Output that havebeen digitized and subjected to CDS by the A/D converting circuit 614are stored in the pixel memories 414.

In the embodiments of FIGS. 14 and 15, an image signal of each pixel isread out as described below. Note that explanation of a reset operationis omitted in order to simplify explanation.

One row selecting line, for example the row selecting line 1, is turnedon. In this state, one transfer interconnection, for example the Gbtransfer interconnection is turned on. Still in this state, one columnselecting line, for example the column selecting line 1, is turned on.Thereby, both the transfer transistors 626, 628 of the pixel Gb of thepixel unit 653 in the unit group 652 are turned on, and electricalcharges in the pixel Gb are transferred to the gate of the amplifyingtransistor 622. Here, because the row selecting line 1 is in an ONstate, the selecting transistor 624 has also been turned on, and a pixelsignal that has been amplified according to the electrical chargestransferred to the gate of the amplifying transistor 622 is output fromthe output interconnection 604 corresponding to the pixel unit 653.Furthermore, by switching ON states of the column selecting linessequentially while maintaining the ON states of the row selecting line 1and the Gb transfer interconnection, pixel signals of one row of thepixels Gb are output sequentially from the respective outputinterconnections 604.

By switching, with the multiplexer 610, inputs from the respectiveoutput interconnections 604 in synchronization with switching of thecolumn selecting lines, pixel signals from the pixels Gb are input tothe A/D converting circuit 614 on a pixel-by-pixel basis. Each of thepixel signals of one row of the pixels Gb in the unit group 652 is readout and stored in the pixel memory 414 without being influenced by otherpixel signals.

Next, by switching ON states of the column selecting lines sequentiallyin a state where the row selecting line 1 and the Gr transferinterconnection are turned on, pixel signals of one row of the pixels Grare output sequentially from the respective output interconnections 604.Similarly, by switching ON states of the column selecting linessequentially in a state where the row selecting line 1 and the Btransfer interconnection are turned on, pixel signals of one row of thepixels B are output sequentially from the respective outputinterconnections 604, and by switching ON states of the column selectinglines sequentially in a state where the row selecting line 1 and the Rtransfer interconnection are turned on, pixel signals of one row of thepixels R are output sequentially from the respective outputinterconnections 604. In the above-described manner, the pixel signalsof two rows of the pixels in the unit group 652 are read out.

Next, by turning on the row selecting line 2 and repeating theabove-described procedure, pixel signals of next two rows of pixels inthe unit group 652 are read out. By repeating the above-describedprocedure for all the row selecting lines, pixel signals of all thepixels in the unit group 652 are read out.

According to the embodiments in FIGS. 14 and 15 also, because only onerow selecting line has to be provided to two rows of pixels in each unitgroup 652, interconnections can be routed easily. Also, because only oneoutput interconnection has to be provided to two columns of pixels ineach unit group 652, interconnections can be routed easily. Also, theCDS circuit can be provided on the signal processing chip 111 side.

FIG. 16 schematically illustrates a unit group 655 of still anotherimaging element 654. FIG. 17 illustrates a schematic of a pixel unit 656within the unit group 655. Configurations and functions in FIGS. 16 and17 that are the same with those in FIGS. 14 and 15 are given the samereference numbers, and explanation thereof is omitted.

In the unit group 655, a plurality of the output interconnections 604are connected in common to the one bump 606 provided corresponding tothe unit group 652. The bump 606 is connected with the input side of theA/D converting circuit 614. Also, a selecting transistor 642 whose gateis connected with a column selecting line is provided to the outputinterconnection 604 of the pixel unit 656.

In the embodiments of FIGS. 16 and 17, an image signal of each pixel isread out as described below. Note that explanation of a reset operationis omitted in order to simplify explanation.

One row selecting line, for example the row selecting line 1, is turnedon. In this state, one transfer interconnection, for example the Gbtransfer interconnection is turned on. Still in this state, one columnselecting line, for example the column selecting line 1, is turned on.Thereby, both the transfer transistors 626, 628 of the pixel Gb of thepixel unit 656 in the unit group 655 are turned on, and electricalcharges in the pixel Gb are transferred to the gate of the amplifyingtransistor 622. Here, because the row selecting line 1 is in an ONstate, the selecting transistor 624 has also been turned on, and a pixelsignal that has been amplified according to the electrical chargestransferred to the gate of the amplifying transistor 622 is output fromthe output interconnection 604 corresponding to the pixel unit 653.

Furthermore, by switching ON states of the column selecting linessequentially while maintaining the ON states of the row selecting line 1and the Gb transfer interconnection, pixel signals of one row of thepixels Gb are output sequentially from the respective outputinterconnections 604. Accordingly, pixel signal from the pixels Gb areinput to the A/D converting circuit 614 via the bump 606 on a onepixel-by-one pixel basis. In this case, because the selecting transistor642 is disposed in the respective pixel unit 656, an output of the pixelGb of the pixel unit 656 that is not selected by the column selectingline is blocked. Accordingly, each of the pixel signals of one row ofthe pixels Gb in the unit group 655 is read out and stored in the pixelmemories 414 without being influenced by other pixel signals.

Next, by switching ON states of the column selecting lines sequentiallyin a state where the row selecting line 1 and the Gr transferinterconnection are turned on, pixel signals of one row of the pixels Grare output sequentially from the respective output interconnections 604.Similarly, by switching ON states of the column selecting linessequentially in a state where the row selecting line 1 and the Btransfer interconnection are turned on, pixel signals of one row of thepixels B are output sequentially from the respective outputinterconnections 604, and by switching ON states of the column selectinglines sequentially in a state where the row selecting line 1 and the Rtransfer interconnection are turned on, pixel signals of one row of thepixels R are output sequentially from the respective outputinterconnections 604.

In the above-described manner, the pixel signals of two rows of thepixels in the unit group 655 are read out. Next, by turning on the rowselecting line 2 and repeating the above-described procedure, pixelsignals of next two rows of pixels in the unit group 655 are read out.By repeating the above-described procedure for all the row selectinglines, pixel signals of all the pixels in the unit group 655 are readout.

According to the embodiments in FIGS. 16 and 17 also, because only onerow selecting line has to be provided to two rows of pixels in each unitgroup 655, interconnections can be routed easily. Also, because only oneoutput interconnection has to be provided to two columns of pixels ineach unit group 655, interconnections can be routed easily. Also, theCDS circuit can be provided on the signal processing chip 111 side.Furthermore, because a multiplexer may not be provided, interconnectionson the signal processing chip 111 side can be simplified.

Although in the embodiments illustrated in FIGS. 12 to 17, the A/Dconverting circuits 612, 614 are provided on a one-to-one basis to theunit groups 602, 652, 655, the number of the A/D converting circuits612, 614 is not limited to one. A plurality of the A/D convertingcircuits 612, 614 may be provided to each unit group 602, 652, 655. Inthis case, a plurality of the output interconnections 604 of each unitgroup 602, 652, 655 are respectively allocated to any of the pluralityof A/D converting circuits 612, 614 and interconnected and inputthereto.

Also, although a pixel unit consists of four pixels, a row selectinginterconnection is disposed for every two rows of pixels, and an outputinterconnection is disposed for every three columns of pixels, theseconfigurations are not essential. For example, when a pixel unitconsists of m rows and n columns, in a unit group, a row selectinginterconnection may be provided to every m rows, and an outputinterconnection may be provided to every n columns, and m×n separatetransfer interconnections may be provided. Note that each transferinterconnection may be shared within a pixel group.

The imaging device 500 according to the above-described embodiments maybe used to image still images or moving images. When imaging movingimages, an accumulation period of each pixel group may be changed overtime. For example, an accumulation period of each pixel group may bechanged dynamically before and after a scene change. In this case, anaccumulation period may be changed as in a case of still images based onan immediately previous image. Also, an accumulation period may bechanged based on images that have been imaged over immediately precedingseveral seconds, for example based on a time average of the images.Also, an accumulation period may be changed according to a flow ofimaging, by using a database in which a relationship between the flow ofimaging and accumulation periods is preregistered.

Also, although the imaging chip 113, the signal processing chip 111, andthe memory chip 112 are layered in the above-described embodiments,these may not be layered. That is, their functions may be provided in asingle chip.

While the embodiment(s) of the present invention has (have) beendescribed, the technical scope of the invention is not limited to theabove described embodiment(s). It is apparent to persons skilled in theart that various alterations and improvements can be added to theabove-described embodiment(s). It is also apparent from the scope of theclaims that the embodiments added with such alterations or improvementscan be included in the technical scope of the invention.

The operations, procedures, steps, and stages of each process performedby an apparatus, system, program, and method shown in the claims,embodiments, or diagrams can be performed in any order as long as theorder is not indicated by “prior to,” “before,” or the like and as longas the output from a previous process is not used in a later process.Even if the process flow is described using phrases such as “first” or“next” in the claims, embodiments, or diagrams, it does not necessarilymean that the process must be performed in this order.

What is claimed is:
 1. An image sensor comprising; a plurality of pixelsthat each have a photoelectric conversion unit that converts light intoan electrical charge; a first control interconnection that is connectedto, among the plurality of pixels, a plurality of first pixels eachhaving a first photoelectric conversion unit that converts light from afirst filter having a first spectral characteristic into an electricalcharge, a first control signal for controlling the first pixels beingoutput to the first control interconnection; a second controlinterconnection that is connected to, among the plurality of pixels, aplurality of second pixels each having a second photoelectric conversionunit that converts light from a second filter having a second spectralcharacteristic different from the first spectral characteristic into anelectrical charge, a second control signal for controlling the secondpixels being output to the second control interconnection; a thirdcontrol interconnection that is connected to the plurality of firstpixels and the plurality of second pixels, a third control signal forcontrolling the first pixels and second pixels being output to the thirdcontrol interconnection; a signal processing unit that processes a firstsignal output from each of the first pixels and a second signal outputfrom each of the second pixels; and a storing unit that stores the firstsignals and the second signals that are processed by the signalprocessing unit, wherein the first photoelectric conversion units andthe second photoelectric conversion units are provided in a firstsemiconductor chip, the signal processing unit is provided in a secondsemiconductor chip that is different from the first semiconductor chip,and the storing unit is provided in a third semiconductor chip that isdifferent from the first semiconductor chip and the second semiconductorchip.
 2. The imaging sensor according to claim 1, wherein the firstsemiconductor chip is stacked on the second semiconductor chip.
 3. Theimaging sensor according to claim 1, wherein the signal processing unitincludes a converting circuit configured to convert each of the firstsignals and the second signals into a digital signal, and the storingunit stores the digital signals converted from the first signals by theconverting circuit and the digital signals converted from the secondsignals using by the converting circuit.
 4. The imaging sensor accordingto claim 1, wherein the first semiconductor chip is stacked on the thirdsemiconductor chip.
 5. The imaging sensor according to claim 1, whereinthe signal processing unit includes a first signal processing circuitthat processes each of the first signals and a second signal processingcircuit that processes each of the second signals, and the storing unitincludes a first storing circuit that stores the first signals that areprocessed by the first signal processing circuit and a second storingcircuit that stores the second signals that are processed by the secondsignal processing circuit.
 6. The imaging sensor according to claim 5,wherein the first signal processing circuit includes a first convertingcircuit that is configured to convert each of the first signals into afirst digital signal, and the second signal processing circuit includesa second converting circuit that is configured to convert each of thesecond signals into a second digital signal, the first storing circuitstores the first digital signals, and the second storing circuit storesthe second digital signals.
 7. An electronic device that comprises theimaging sensor according to claim
 1. 8. An imaging sensor comprising: aplurality of pixels that each have a photoelectric conversion unit thatconverts light into an electrical charge; a first controlinterconnection that is connected to, among the plurality of pixels, aplurality of first pixels each having a first photoelectric conversionunit that converts light from a first filter having a first spectralcharacteristic into an electrical charge, a first control signal forcontrolling the first pixels being output to the first controlinterconnection; a second control interconnection that is connected to,among the plurality of pixels, a plurality of second pixels each havinga second photoelectric conversion unit that converts light from a secondfilter having a second spectral characteristic different from the firstspectral characteristic into an electrical charge, a second controlsignal for controlling the second pixels being output to the secondcontrol interconnection; a third control interconnection that isconnected to the plurality of first pixels and the plurality of secondpixels, a third control signal for controlling the first pixels and thesecond pixels being output to the third control interconnection, whereineach of the plurality of first pixels includes a first transfer unitthat transfers an electrical charge from the first photoelectricconversion unit with the first control signal, and a first reset unitthat resets, with the third control signal, a potential of a firstfloating diffusion to which the electrical charge is transferred fromthe first photoelectric conversion unit, and each of the plurality ofsecond pixels includes a second transfer unit that transfers anelectrical charge from the second photoelectric conversion unit with thesecond control signal, and a second reset unit that resets, with thethird control signal, a potential of a second floating diffusion towhich the electrical charge is transferred from the second photoelectricconversion unit.
 9. The imaging sensor according to claim 8, wherein thesecond control signal is output to the second control interconnection ata timing that is different from a timing that the first control signalis output to the first control interconnection.
 10. The imaging sensoraccording to claim 8, further comprising a first output interconnection,to which the first signals from the first pixels are output, that isconnected to the first pixels, and a second output interconnection, towhich the second signals from the second pixels are output, that isconnected to the second pixels, the second output interconnection beingdifferent from the first output interconnection.
 11. The imaging sensoraccording to claim 10, further comprising a first current source circuitthat is connected to the first output interconnection and suppliescurrent to the first output interconnection, and a second current sourcecircuit that is connected to the second output interconnection andsupplies current to the second output interconnection.
 12. The imagingsensor according to claim 8, further comprising: a signal processingunit that processes a first signal output from each of the first pixelsand a second signal output from each of the second pixels; and a storingunit that stores the first signals and the second signals that areprocessed by the signal processing unit.
 13. The imaging sensoraccording to claim 12, wherein the signal processing unit includes afirst signal processing circuit that processes the first signals and asecond signal processing circuit that processes the second signals, andthe storing unit includes a first storing circuit that stores the firstsignals that are processed by the first signal processing circuit and asecond storing circuit that stores the second signals that are processedby the second signal processing circuit.
 14. The imaging sensoraccording to claim 12, wherein the first photoelectric conversion unitsand the second photoelectric conversion units are provided in a firstsemiconductor chip, the signal processing unit is provided in a secondsemiconductor chip that is different from the first semiconductor chip,and the storing unit is provided in a third semiconductor chip that isdifferent from the first semiconductor chip and the second semiconductorchip.
 15. An electronic device that comprises the imaging sensoraccording to claim
 8. 16. An imaging sensor comprising: a plurality ofpixels that each have a photoelectric conversion unit that convertslight into an electrical charge; a first control interconnection that isconnected to, among the plurality of pixels, a plurality of first pixelseach having a first photoelectric conversion unit that converts lightfrom a first filter having a first spectral characteristic into anelectrical charge, a first control signal for controlling the firstpixels being output to the first control interconnection; a secondcontrol interconnection that is connected to, among the plurality ofpixels, a plurality of second pixels each having a second photoelectricconversion unit that converts light from a second filter having a secondspectral characteristic different from the first spectral characteristicinto an electrical charge, a second control signal for controlling thesecond pixels being output from the second control interconnection; athird control interconnection that is connected to the plurality offirst pixels and the plurality of second pixels, a third control signalfor controlling the first pixels and the second pixels being output fromthe third control interconnection; a first output interconnection, towhich a first signal from each of the first pixels is output, that isconnected to the first pixels, a second output interconnection, to whicha second signal from each of the second pixels is output, that isconnected to the second pixels, the second output interconnection beingdifferent from the first output interconnection, a first current sourcecircuit that is connected to the first output interconnection andsupplies current to the first output interconnection, and a secondcurrent source circuit that is connected to the second outputinterconnection and supplies current to the second outputinterconnection.
 17. The imaging sensor according to claim 16, furthercomprising: a signal processing unit that processes the first signalsoutput from the first pixels and the second signals output from thesecond pixels; and a storing unit that stores the first signals and thesecond signals that are processed by the signal processing unit.
 18. Theimaging sensor according to claim 17, wherein the signal processing unitincludes a first signal processing circuit that processes the firstsignals and a second signal processing circuit that processes the secondsignals, and the storing unit includes a first storing circuit thatstores the first signals that are processed by the first signalprocessing circuit and a second storing circuit that stores the secondsignals that are processed by the second signal processing circuit. 19.The imaging sensor according to claim 17, wherein the firstphotoelectric conversion units and the second photoelectric conversionunits are provided in a first semiconductor chip, the signal processingunit is provided in a second semiconductor chip that is different fromthe first semiconductor chip, and the storing unit is provided in athird semiconductor chip that is different from the first semiconductorchip and the second semiconductor chip.
 20. An electronic device thatcomprises the imaging sensor according to claim 16.